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South Korea Leads the Race in Ferroelectric Memory for AI Chips
Source: kmjournal.net
Published on January 19, 2026
Updated on January 19, 2026

South Korea has vaulted to the forefront of ferroelectric memory technology, a critical innovation poised to redefine the future of AI-driven semiconductors. A detailed analysis of global patent filings reveals that South Korean companies are not only filing the most patents in this space but are also innovating at an unmatched pace, solidifying their dominance in an increasingly competitive field.
Ferroelectric memory, which can be produced using existing semiconductor manufacturing lines, offers a cost-effective and scalable solution for high-density AI chips. As demand for advanced AI accelerators grows, this technology is emerging as a practical and efficient pathway for next-generation AI memory.
South Korea's Dominance in Ferroelectric Device Patents
According to data from the Korean Intellectual Property Office, South Korea ranked first in ferroelectric device patent applications filed with the world’s five major patent offices between 2012 and 2023. The country accounted for 395 filings, representing 43.1% of the total, far outpacing competitors such as the United States and Japan. The annual average growth rate of ferroelectric device patents from South Korea reached 18.7%, the highest among all countries analyzed, compared to 14.7% for China and 12.5% for the United States.
Samsung Electronics led the charge with 255 patents, accounting for 27.8% of total filings, followed by Intel with 193 patents and SK Hynix with 123. Taiwan Semiconductor Manufacturing Company (TSMC) also ranked among the top applicants with 93 patents. These figures underscore South Korea’s aggressive push into ferroelectric memory, positioning the country as a global leader in this emerging technology.
The Strategic Importance of Ferroelectric Memory for AI
Ferroelectric devices are gaining traction due to their ability to be manufactured on existing semiconductor production lines, eliminating the need for massive investments in new fabrication facilities. This cost advantage makes ferroelectric memory particularly attractive for high-density AI chips, where performance, efficiency, and scalability are paramount. As AI applications continue to expand across data centers, consumer electronics, and other sectors, the demand for ferroelectric memory is expected to surge.
Kim Hee-tae, head of the Semiconductor Examination Promotion Division at the Korean Intellectual Property Office, emphasized the strategic importance of patent strategy in the race to commercialize ferroelectric memory. He noted that as the technology approaches real-world deployment, patent leadership will play a decisive role in shaping the global semiconductor landscape.
South Korea’s early and aggressive investment in ferroelectric memory may prove to be a defining advantage in the global competition for AI-focused semiconductors. With Samsung and SK Hynix leading the way, the country is well-positioned to maintain its leadership in next-generation AI memory technologies, setting the stage for future innovations in the AI chip market.